marvinhello
Well-known member
I've been wondering, since global shutter circuitry on F55 sensor reduces the fill factor of the photosites, does this mean the sensor is not back-side illuminated? or the specifically the global shutter circuitry has to be placed on the photo sensitive layer?
On F65, Sony claims that the use of copper interconnect (Cu BEOL) reduces the wiring layer by 40% and results in improved sensitivity, does this also mean that the wiring layer is in front of the photodiode?
On F65, Sony claims that the use of copper interconnect (Cu BEOL) reduces the wiring layer by 40% and results in improved sensitivity, does this also mean that the wiring layer is in front of the photodiode?